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| Composite Transistors XP4116 Silicon PNP epitaxial planer transistor Unit: mm 0.425 1.250.1 0.425 0.20.05 For switching/digital circuits 2.10.1 0.65 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.00.1 s Features 0.65 1 2 3 6 5 4 0.2 0.90.1 s Basic Part Number of Element q 0 to 0.1 UN1116 x 2 elements 0.70.1 0.20.1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings -50 -50 -100 150 150 -55 to +150 Unit V V mA mW C C 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC-88 S-Mini Type Package (6-pin) Marking Symbol: 6U Internal Connection 1 2 3 Tr1 6 5 4 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA VCC = -5V, VB = - 0.5V, RL = 1k VCC = -5V, VB = -2.5V, RL = 1k VCB = -10V, IE = 1mA, f = 200MHz -30% 80 4.7 +30% -4.9 - 0.2 160 min -50 -50 - 0.1 - 0.5 - 0.01 460 - 0.25 V V V MHz k typ max Unit V V A A mA 0.12 -0.02 +0.05 1 Composite Transistors PT -- Ta 250 XP4116 Total power dissipation PT (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) IC -- VCE -160 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 400 VCE= -10V Collector current IC (mA) -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -30 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 25C Ta=75C -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -8 Forward current transfer ratio hFE -140 IB=-1.0mA Ta=25C Collector to emitter saturation voltage VCE(sat) (V) 300 Ta=75C -0.4mA -0.3mA -0.2mA 200 25C -25C 100 -0.1mA -25C -10 -12 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO= -0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 2 |
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